C35 GTO缓冲吸收电容器
型号 | 规格 | 价格(元) | 尺寸(mm) | 引出 |
C35 | 0.47vF/5000V | 50 | Φ53*L50 | M6 |
价格仅供参考,以报价单为准。主要应用/Application广泛应用于GTO缓冲吸收以及大电流,高压场合。Widely used in GTO snubber,high current and high voltage application. 产品特点/Characteristics电介质:聚丙烯薄膜结构:金属化膜内串结构封装:外包阻燃迈拉胶带,阻燃(94V-0级)环氧封装引出: M6或M8铜螺母引出能承受大电流,高电压低损耗、高稳定具有自愈性Dielectric:Polypropylene filmConstruction:me
talized film internal series connectionCoating:Polyester tape wrapping with resin sealing.Flame retardant execution(UL94V-0)Terminals:Copper nut leads,threaded insert M5,M6 or M8High current,high voltageLow losses,high stabilitySelf healing 技术性能/Specifications
引用标准/Reference standards | GB/T 17702 IEC 61071 |
工作温度范围/Operating temperature range | -40℃~85℃ |
容量范围/Capacitance | 0.33μF~3.0μF |
额定电压/Rated Voltage | 4000Vdc~10 000Vdc |
容量偏差/Tolerance | ±5% ±10% |
极间耐电压/Test voltage between terminals | 1.5Ur(Vdc)10s 25℃±5℃ |
极壳耐电压/Test voltage between terminals and case | 3000V 50Hz 60s,25℃±5℃ |
损耗角正切/Dissipation factor | tgδ≤8×10-4 at 25℃±5℃,1kHz |
绝缘电阻/Insulation resistance | C×R≥30000s,at 100Vdc,25℃±5℃,60s |
预期寿命/Life expectancy | 200000h at Ur and 70℃ |
此产品关键字:IGBT吸收电容、IGBTSNUBBER、IGBT吸收电容厂家、IGBT吸收电容价格 华裕电容-高品质金属化薄膜电容专业制造商全国免费咨询热线:400-850-5811销售热线(直线):020-87022531 020-87022473传真:02087022531 02087023473手机:18665682511http://www.hy-el.com http://www.gdhyel.com