高纯铟(In)5N-7N

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铟（In）

规格：

      高纯铟：99.999% In-5N-I-24

      检测杂质：Cu, Fe, Mg, Ni, Pb, Sn, Tl, Zn, Si, S

      杂质总含量：≤10ppm

      高纯铟：99.9999% In-6N-I-25

      检测杂质：Cd, Cu, Fe, Mg, Pb, S, Si, Sn

      杂质总含量：≤1ppm

      高纯铟：99.99999% In-7N-I-26

      检测杂质：Ag, Cd, Cu, Fe, Mg, Ni, Pb, Zn

     杂质总含量：≤0.1ppm

用途：主要用于制备Ⅲ-Ⅴ族化合物半导体、高纯合金以及ITO粉末。

包装：涤纶薄膜包装后双层复合膜抽真空包装外套复合铝箔内充氩气封装或直接玻璃管真空封装。

Specification:
High purity In: 99.999% In-5N-I-24
Testing impurity: Cu, Fe, Mg, Ni, Pb, Sn, Tl, Zn, Si, S
Total impurity content: ≤10ppm
High purity In: 99.9999% In-6N-I-25
Testing impurity: Cd, Cu, Fe, Mg, Pb, S, Si, Sn
Total impurity content: ≤1ppm
High purity In: 99.99999% In-7N-I-26
Testing impurity: Ag, Cd, Cu, Fe, Mg, Ni, Pb, Zn
Total impurity content: ≤0.1ppm
Application: Used for preparation Ⅲ-Ⅴ elements chemical compound semiconductor, high purity metal, and ITO powder.
Package: Packed with terylene film, and double poly-film with vacuum encapsulation, then with aluminum foil with argon encapsulation. Packed with glass tube with vacuum encapsulation directly.